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The ultimate CMOS device and beyond

Authors :
Ravi Pramod Vedula
Annalisa Cappellani
Kelin J. Kuhn
Uygar E. Avci
Roza Kotlyar
Robert S. Chau
Seiyon Kim
Marko Radosavljevic
Ian A. Young
Sasikanth Manipatruni
Martin D. Giles
Rafael Rios
Sadasivan Shankar
Dmitri E. Nikonov
Chytra Pawashe
Michael Haverty
Source :
2012 International Electron Devices Meeting.
Publication Year :
2012
Publisher :
IEEE, 2012.

Abstract

For the past 40 years, relentless focus on Moore's Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.

Details

Database :
OpenAIRE
Journal :
2012 International Electron Devices Meeting
Accession number :
edsair.doi...........50afdf3a968285a8ce5ed038769c6f55
Full Text :
https://doi.org/10.1109/iedm.2012.6479001