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Investigation pre-amorphization implantation on nickel silicide formation

Authors :
Chun Ling Lin
Olivia Huang
Pin Hong Chen
J. Y. Wu
Chia Chang Hsu
Chun Chieh Chiu
C. M. Hsu
Boris Liao
Jerander Lai
Source :
IEEE International Interconnect Technology Conference.
Publication Year :
2014
Publisher :
IEEE, 2014.

Abstract

Pre-amorphization implantation (PAI) of various energy and dosage are used on Ni-Silicide formation, which has achieved amorphism-like NiSi films. The electric characteristic, physical morphology and metallurgical of the NiSi were identified by sheet resistance, grazing incident X-ray diffraction (GIXRD), and selected-area electron diffraction (SAD) analysis. Result shows that lower energy and higher dosage of ion implantation can get amorphism-like NiSi film.

Details

Database :
OpenAIRE
Journal :
IEEE International Interconnect Technology Conference
Accession number :
edsair.doi...........50998a50ca356e6bd4fd060ffb5e33b2