Back to Search
Start Over
Investigation pre-amorphization implantation on nickel silicide formation
- Source :
- IEEE International Interconnect Technology Conference.
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- Pre-amorphization implantation (PAI) of various energy and dosage are used on Ni-Silicide formation, which has achieved amorphism-like NiSi films. The electric characteristic, physical morphology and metallurgical of the NiSi were identified by sheet resistance, grazing incident X-ray diffraction (GIXRD), and selected-area electron diffraction (SAD) analysis. Result shows that lower energy and higher dosage of ion implantation can get amorphism-like NiSi film.
Details
- Database :
- OpenAIRE
- Journal :
- IEEE International Interconnect Technology Conference
- Accession number :
- edsair.doi...........50998a50ca356e6bd4fd060ffb5e33b2