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Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array
- Source :
- Optical Engineering. 43:1700
- Publication Year :
- 2004
- Publisher :
- SPIE-Intl Soc Optical Eng, 2004.
-
Abstract
- An optical model for simulating light extraction efficiency of a GaN-based LED chip is presented. We propose the introduction of a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 78% light extraction efficiency.
- Subjects :
- Materials science
business.industry
Light extraction in LEDs
General Engineering
Gallium nitride
Sharpening
Atomic and Molecular Physics, and Optics
Light scattering
law.invention
LED lamp
Solid-state lighting
chemistry.chemical_compound
Optics
chemistry
law
Sapphire
Optoelectronics
business
Light-emitting diode
Subjects
Details
- ISSN :
- 00913286
- Volume :
- 43
- Database :
- OpenAIRE
- Journal :
- Optical Engineering
- Accession number :
- edsair.doi...........508ffd7e4ba44471ff7b2405d46dee6e