Thermal diffusion of Pt in silicon from PtSi

Platinum diffusion in n‐type silicon has been measured using various kinds of spectroscopic techniques for deep energy levels. Platinum acts as an acceptor which captures electrons. An energy level of 0.23±0.02 eV was found for the trap. The diffusion profile can be explained, as in the case of gold, with a kick‐out mechanism involving silicon self‐interstitials. From the model, an activation energy of 5.01 eV for silicon self‐interstitial diffusion can be inferred.