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Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs
- Source :
- Journal of Crystal Growth. 401:302-304
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Low-frequency noise measurements, combined with the conventional techniques for the study of InGaN/GaN-based LEDs, make it possible to separate the contribution of conductive paths associated with the extended defect system (EDS) and point defects (PD) to non-radiative recombination processes. These measurements also can reveal physical mechanisms leading to the unpredictable failure of LEDs, such as non-uniform current distribution, local overheating, and presence of local InGaN regions with a reduced band gap width E g .
Details
- ISSN :
- 00220248
- Volume :
- 401
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........501f73086c10a4fe8c3f8daded69a34a