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InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy
- Source :
- Progress in Photovoltaics: Research and Applications. 29:1285-1293
- Publication Year :
- 2021
- Publisher :
- Wiley, 2021.
Details
- ISSN :
- 1099159X and 10627995
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- Progress in Photovoltaics: Research and Applications
- Accession number :
- edsair.doi...........4fd5f379d7c8a9557f7fb26b206fd74c
- Full Text :
- https://doi.org/10.1002/pip.3454