Back to Search
Start Over
Effect of implantation temperature on the H-induced microstructural damage in AlN
- Source :
- Journal of Alloys and Compounds. 588:300-304
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- A detailed physical investigation of the H-induced microstructural damage in (0001) AlN epitaxial layers at various implantation temperatures is presented. Cross-sectional transmission electron microscopy revealed that in the case of samples implanted at 300 C, extended defects (nanocracks) were formed only within � 50 nm region situated below the H-concentration peak in the damage band of width � 280 nm compared with lower implantation temperatures. This implantation temperature-dependent behavior of the microstructural damage decides the morphology of the top buckled surface. Various favorable conditions for the buckling of H-implanted surface in the form of large area exfoliation are proposed based on the present study.
Details
- ISSN :
- 09258388
- Volume :
- 588
- Database :
- OpenAIRE
- Journal :
- Journal of Alloys and Compounds
- Accession number :
- edsair.doi...........4f8b9260d49c2e929ecdc0f59bd7e009