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A molecular dynamics study of the chemisorption of C2H2 and CH3 on the SI(001)-(2 × 1) surface
- Source :
- Surface Science. 375:45-54
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
-
Abstract
- Chemisorption of C 2 H 2 and CH 3 molecules onto the dimerized (001) surface of silicon has been simulated using the extended Brenner potential. For reference, chemisorption energies and minimum-energy geometries have also been obtained from Hartree-Fock and Becke3LYP DFT calculations performed with the Gaussian-94 suite. Various chemisorption sites have been identified. Optimal C 2 H 2 chemisorption was found to occur in a cross-dimer configuration, parallel to the dimer rows. Optimal CH 3 chemisorption occurred with the CH 3 bonding directly to the surface dangling bonds. A second-layer chemisorption site for CH 3 has also been identified, which may be important in the formation of diamond films on a silicon substrate.
- Subjects :
- Silicon
Chemistry
Dangling bond
chemistry.chemical_element
Diamond
Methyl radical
Surfaces and Interfaces
Substrate (electronics)
engineering.material
Condensed Matter Physics
Surfaces, Coatings and Films
Molecular dynamics
chemistry.chemical_compound
Chemisorption
Materials Chemistry
engineering
Physical chemistry
Molecule
Subjects
Details
- ISSN :
- 00396028
- Volume :
- 375
- Database :
- OpenAIRE
- Journal :
- Surface Science
- Accession number :
- edsair.doi...........4f87673d9b304bc7ee0657ab89f49d75
- Full Text :
- https://doi.org/10.1016/s0039-6028(96)01261-7