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Convertible Volatile and non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor

Authors :
Zuheng Wu
Yongzhou Wang
Jian Lu
Rong Wang
Peiwen Zhang
Qi Liu
Xumeng Zhang
Jinsong Wei
Tuo Shi
Source :
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publication Year :
2021
Publisher :
IEEE, 2021.

Abstract

In this work, a multi-functional self-rectifying memristor (Pt/TiO x /Ti) is fabricated. The device shows convertible volatile and non-volatile resistive switching. More importantly, the device has a high rectifying ratio in both switching modes (~105 for volatile and 106 for non-volatile), which is favorable for high-density 3D vertical integration. The convertible multi-switching behaviors and high self-rectifying ratio in a single memristor provide the flexibility for multi-functional applications in a large-scale array.

Details

Database :
OpenAIRE
Journal :
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Accession number :
edsair.doi...........4f6dc5079e1c5bec0f8ecf2646580fe2