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Crystallographic Characterization of a GaN Epilayer Grown on a Nanoneedle Buffer Layer
- Source :
- New Physics: Sae Mulli. 60:1050-1054
- Publication Year :
- 2010
- Publisher :
- Korean Physical Society, 2010.
Details
- ISSN :
- 22890041 and 03744914
- Volume :
- 60
- Database :
- OpenAIRE
- Journal :
- New Physics: Sae Mulli
- Accession number :
- edsair.doi...........4f623e0b7de0c20ba7ea19c38125c2cb
- Full Text :
- https://doi.org/10.3938/npsm.60.1050