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CMOS image sensor with lateral electric field modulation pixels for fluorescence lifetime imaging with sub-nanosecond time response
- Source :
- Japanese Journal of Applied Physics. 55:04EM06
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- This paper presents the design and implementation of a time-resolved CMOS image sensor with a high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from a pinned photodiode (PPD) to a pinned storage diode (PSD) by turning on a pair of transfer gates, which are situated beside the channel. Unwanted signal charge can be drained from the PPD to the drain by turning on another pair of gates. The pixel array contains 512 (V) × 310 (H) pixels with 5.6 × 5.6 µm2 pixel size. The imager chip was fabricated using 0.11 µm CMOS image sensor process technology. The prototype sensor has a time response of 150 ps at 374 nm. The fill factor of the pixels is 5.6%. The usefulness of the prototype sensor is demonstrated for fluorescence lifetime imaging through simulation and measurement results.
- Subjects :
- Materials science
Channel (digital image)
ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION
Analytical chemistry
General Physics and Astronomy
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
01 natural sciences
Signal
law.invention
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Time domain
Image sensor
Diode
010302 applied physics
Pixel
business.industry
020208 electrical & electronic engineering
General Engineering
Chip
Photodiode
Optoelectronics
business
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 55
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........4edf92b6a529c6042e1ae7ecca50c4fb