Cite
Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs
MLA
Shree Prakash Tiwari, et al. “Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 66, Jan. 2019, pp. 561–69. EBSCOhost, https://doi.org/10.1109/ted.2018.2878770.
APA
Shree Prakash Tiwari, Vipin Joshi, & Mayank Shrivastava. (2019). Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 66, 561–569. https://doi.org/10.1109/ted.2018.2878770
Chicago
Shree Prakash Tiwari, Vipin Joshi, and Mayank Shrivastava. 2019. “Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices 66 (January): 561–69. doi:10.1109/ted.2018.2878770.