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Evaluation of plasma-induced charging damage on metal contact process

Authors :
Kyoung-sub Shin
Joo-Tae Moon
Sang-In Lee
Wan-Jae Park
Chang-Jin Kang
Tae-Hyuk Ahn
Ji-Soo Kim
Source :
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
Publication Year :
2003
Publisher :
IEEE, 2003.

Abstract

The evaluation of plasma-induced charging damage in a metal contact process has been studied with a two dimensional Monte-Carlo simulation and related experiments. From the simulation, it is concluded that the linear shrinkage of the design rule possibly evokes exponential plasma-induced charging damage on the gate oxide during the plasma process. We also confirmed the simulation results with the two different experiments, in-situ charge-up monitoring wafers and fully fabricated test wafers. A phase-controlled pulsed inductively coupled plasma is proposed to suppress the plasma-induced charging damage. Preliminary results show that charging damage is strongly suppressed when the phase delay of the bias power to the source power is near to 180 degrees.

Details

Database :
OpenAIRE
Journal :
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)
Accession number :
edsair.doi...........4e4692cd98b212965c2f357500952be9
Full Text :
https://doi.org/10.1109/icvc.1999.820853