Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature

MLA

Noriko Nitta, et al. “Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature.” MATERIALS TRANSACTIONS, vol. 52, Jan. 2011, pp. 127–29. EBSCOhost, https://doi.org/10.2320/matertrans.m2010248.

APA

Noriko Nitta, Tokiya Hasegawa, Hidehiro Yasuda, Toshimasa Yoshiie, Yoshihiko Hayashi, & Masafumi Taniwaki. (2011). Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature. MATERIALS TRANSACTIONS, 52, 127–129. https://doi.org/10.2320/matertrans.m2010248

Chicago

Noriko Nitta, Tokiya Hasegawa, Hidehiro Yasuda, Toshimasa Yoshiie, Yoshihiko Hayashi, and Masafumi Taniwaki. 2011. “Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature.” MATERIALS TRANSACTIONS 52 (January): 127–29. doi:10.2320/matertrans.m2010248.