Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current

It is established that the low-frequency noise density S in InGaN/GaN based light-emitting diodes (LEDs) operating a current densities j > 20 A/cm2 depends on the current density as S ∼ j3. This dependence is indicative of the formation of new nonradiative recombination centers, which may account for a drop in the external quantum efficiency of LEDs operating at high current densities.