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State-of-the-art THz integrated circuits in InP HBT technologies

Authors :
Sungbin Kang
Miguel Urteaga
Dongwoo Kim
Munkyo Seo
Source :
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Publication Year :
2017
Publisher :
IEEE, 2017.

Abstract

In this paper, state-of-the-art terahertz (THz) integrated circuits in InP HBT technologies operating in the 500–600 GHz band are reviewed: the highest-frequency fundamental transistor oscillator, THz power amplifier in HBT with the highest saturated output power, the highest-frequency dynamic frequency divider, and the highest-frequency transmit/receive front-end integrated circuits, to the best of authors' knowledge.

Details

Database :
OpenAIRE
Journal :
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Accession number :
edsair.doi...........4d83600d9e223090676a58ae9ff3b701
Full Text :
https://doi.org/10.1109/rfit.2017.8048278