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State-of-the-art THz integrated circuits in InP HBT technologies
- Source :
- 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- In this paper, state-of-the-art terahertz (THz) integrated circuits in InP HBT technologies operating in the 500–600 GHz band are reviewed: the highest-frequency fundamental transistor oscillator, THz power amplifier in HBT with the highest saturated output power, the highest-frequency dynamic frequency divider, and the highest-frequency transmit/receive front-end integrated circuits, to the best of authors' knowledge.
- Subjects :
- Physics
Terahertz radiation
business.industry
Heterojunction bipolar transistor
Amplifier
020208 electrical & electronic engineering
Transistor
Electrical engineering
020206 networking & telecommunications
02 engineering and technology
Integrated circuit
Power (physics)
law.invention
Frequency divider
law
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
State (computer science)
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
- Accession number :
- edsair.doi...........4d83600d9e223090676a58ae9ff3b701
- Full Text :
- https://doi.org/10.1109/rfit.2017.8048278