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Deposition characteristics of titanium coating deposited on SiC fiber by cold-wall chemical vapor deposition
- Source :
- Materials Chemistry and Physics. 184:189-196
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The deposition characteristics of titanium coating on SiC fiber using TiCl4-H2-Ar gas mixture in a cold-wall chemical vapor deposition were studied by the combination of thermodynamic analysis and experimental studies. The thermodynamic analysis of the reactions in the TiCl4-H2-Ar system indicates that TiCl4 transforms to titanium as the following paths: TiCl4 → TiCl3 → Ti, or TiCl4 → TiCl3 → TiCl2 → Ti. The experimental results show that typical deposited coating contains two distinct layers: a TiC reaction layer close to SiC fiber and titanium coating which has an atomic percentage of titanium more than 70% and that of carbon lower than 30%. The results illustrate that a carbon diffusion barrier coating needs to be deposited if pure titanium is to be prepared. The deposition rate increases with the increase of temperature, but higher temperature has a negative effect on the surface uniformity of titanium coating. In addition, appropriate argon gas flow rate has a positive effect on smoothing the surface morphology of the coating.
- Subjects :
- 010302 applied physics
chemistry.chemical_classification
Argon
Materials science
Diffusion barrier
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Chemical vapor deposition
engineering.material
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surface coating
chemistry
Chemical engineering
Coating
0103 physical sciences
engineering
Deposition (phase transition)
General Materials Science
Compounds of carbon
0210 nano-technology
Titanium
Subjects
Details
- ISSN :
- 02540584
- Volume :
- 184
- Database :
- OpenAIRE
- Journal :
- Materials Chemistry and Physics
- Accession number :
- edsair.doi...........4d614e6e6636f30736605d630a92e7b5
- Full Text :
- https://doi.org/10.1016/j.matchemphys.2016.09.041