InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz

MLA

Yu Gao, et al. “InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz.” IEEE Electron Device Letters, vol. 39, Jan. 2018, pp. 75–78. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........4d4e73e1dfe4a03361f290e28ccd017e&authtype=sso&custid=ns315887.

APA

Yu Gao, Geok Ing Ng, Tomas Palacios, Zhihong Liu, Haodong Qiu, Weichuan Xing, & K. Ranjan. (2018). InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz. IEEE Electron Device Letters, 39, 75–78.

Chicago

Yu Gao, Geok Ing Ng, Tomas Palacios, Zhihong Liu, Haodong Qiu, Weichuan Xing, and K. Ranjan. 2018. “InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz.” IEEE Electron Device Letters 39 (January): 75–78. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........4d4e73e1dfe4a03361f290e28ccd017e&authtype=sso&custid=ns315887.