Novel organic‐on‐InP field‐effect transistor

We report the first organic‐on‐inorganic contact barrier semiconductor transistor. InP field‐effect transistor similar to metal‐semiconductor field‐effect transistors was made by vacuum subliming a thin film of N, N’‐dimethyl 3,4,9,10‐perylenetetracarboxylic diimide onto Si‐implanted channel, forming a gate contact. Good pinch‐off characteristics and relatively small gate leakage current were obtained. The extrinsic transconductances for these devices are approximately 70–80 mS/mm, with a gate length of 1.5 μm and a channel carrier concentration in the high 1016 cm−3.