Comparison between Lateral and Interleaved Junctions for High-speed O-band Silicon Mach-Zehnder Modulator

Authors :: Alexandre P. Freitas
Diogo A. Motta
Giovanni B. de Farias
Yesica R. R. Bustamante
Lucas Grabielli
Hugo E. Hernandez-Figueroa
Source :: Latin America Optics and Photonics Conference.
Publication Year :: 2018
Publisher :: OSA, 2018.
Abstract: In this work, we present a design for a high-bandwidth (> 40 GHz) O-band Silicon Mach-Zehnder modulator using a lateral junction and compare it with an interleaved junction in terms of efficiency, loss and bandwidth.

Subjects :: Silicon photonics
Materials science
Silicon
business.industry
Electro-optic modulator
chemistry.chemical_element
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
chemistry
Hardware_GENERAL
Modulation
Condensed Matter::Superconductivity
Hardware_INTEGRATEDCIRCUITS
Bandwidth (computing)
Optoelectronics
Hardware_ARITHMETICANDLOGICSTRUCTURES
business
Refractive index

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