Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor

MLA

Wei Li, et al. “Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor.” Materials Science Forum, vol. 984, Apr. 2020, pp. 97–103. EBSCOhost, https://doi.org/10.4028/www.scientific.net/msf.984.97.

APA

Wei Li, Dongyang Li, Yu Han Yuan, Xin Zhao, Nasir Ilyas, & Xiang Dong Jiang. (2020). Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor. Materials Science Forum, 984, 97–103. https://doi.org/10.4028/www.scientific.net/msf.984.97

Chicago

Wei Li, Dongyang Li, Yu Han Yuan, Xin Zhao, Nasir Ilyas, and Xiang Dong Jiang. 2020. “Effect on Resistive Switching by Inserting TiOx Thin Layer in SiOx: Ag-Based Memristor.” Materials Science Forum 984 (April): 97–103. doi:10.4028/www.scientific.net/msf.984.97.