Influence of Mercaptoethanol Concentration on the Structural, Surface, Optical and Electrical Properties of <Ag/Melt Growth Polished p-Si/n-CdZnS/Ag> Hetero p-n Junction high voltage Range Tunable Short Diodes

n-CdZnS thin films have been prepared by our in-house designed and developed chemical bath deposition (CBD) instrument using 2-mercaptoethanol as capping agent. The structural properties were investigated through X-ray diffraction (XRD) analysis which results the obtained CdZnS thin films are of hexagonal phase. The surface morphology and surface texture of the fabricated CdZnS thin films were characterized by scanning electron microscopy and atomic force microscopy. Room temperature photoluminescence (PL) spectra recorded the optical properties of CdZnS deposited on p-Silicon substrates, which showed obvious blue shift relative to the CdZnS bulk materials. Electrical properties of the grown p-Si/n-CdZnS hetero-junctions were characterized by current-voltage (I-V) measurements.