Measurement of nonlinear dielectric behaviour of semiconductor material under microwave field

In this paper, a microwave cavity for investigating the effect of external microwave fields on the dielectric behavior of semiconductor material is proposed. The method is based on a dual-mode rectangular cavity where the motivating and testing signals are performed by two different swept frequency microwave sources. By adjusting the power level of the motivating signal, the intensive of microwave field in the cavity is changed. Measurement results show that the dielectric properties of indium phosphate have a manifest nonlinear behavior under the electronic field intensity of 105 V/m. According to the effective experimental method and theoretical analysis, we conclude that the nonlinear behavior is caused by the materials inherent characteristics.