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Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy

Authors :
Yoshikazu Terai
Naoki Furukawa
Yasufumi Fujiwara
Takashi Kawasaki
Atsushi Nishikawa
Source :
Applied Physics Letters. 97:051113
Publication Year :
2010
Publisher :
AIP Publishing, 2010.

Abstract

We investigated the luminescence properties of Eu-doped GaN (GaN:Eu) grown by atmospheric-pressure organometallic vapor phase epitaxy. The GaN:Eu exhibited radiant red emission due to the intra-4f shell transition of Eu3+ ions at room temperature. The intensity of the dominant peak was about 4 times higher than that in the sample grown at 10 kPa, even though the Eu concentration was only half that of the 10 kPa sample. This was mainly caused by the enhancement of the energy transfer from the GaN host to Eu ions. The enhanced energy transfer resulted in improved luminescence properties of a GaN:Eu light-emitting diode.

Details

ISSN :
10773118 and 00036951
Volume :
97
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........4c47d62ecdc9cbc0ca142bf2a18a1711
Full Text :
https://doi.org/10.1063/1.3478011