MgB2 thin films grown on graphene/Ni–Mo alloy system

200 nm Ni film is coated on 25 μm thick Mo foil, and graphene is grown on the Ni–Mo system by CVD method. After the annealing process of CVD, the Ni/Mo bilayer transforms into Ni–Mo alloy, then we have successfully fabricated MgB 2 films on graphene/Ni–Mo alloy system via the hybrid physical–chemical vapor deposition (HPCVD) technique. The transition temperature T c onset is 38.25 K with a corresponding transition width of 0.75 K. The average thickness of MgB 2 films is 200 nm (25% concentration B 2 H 6 ). The critical current density derives from the magnetization measurement at 5 K is, j c (5 K, 0 T) = 9.6 × 10 6 A/cm 2 . We can easily deposite MgB 2 on graphene/Ni–Mo alloy system with a lower B 2 H 6 concentration and less gas flow, which lays a good foundation for depositing MgB 2 thick films. The graphene in this system is multilayer and with defects, it may act like an intermediary film for the growth of MgB 2 , or a carbon-doping source.