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Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method
- Source :
- Applied Physics Letters. 93:083509
- Publication Year :
- 2008
- Publisher :
- AIP Publishing, 2008.
-
Abstract
- Single crystalline Nd2O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100°C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17×1011eV−1cm−2 and 3.75×1012cm−2, respectively. The interface trap density is then further confirmed by the conductance method.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
Annealing (metallurgy)
business.industry
Analytical chemistry
Oxide
chemistry.chemical_element
Low frequency
law.invention
Capacitor
chemistry.chemical_compound
chemistry
law
Electrical resistivity and conductivity
Optoelectronics
Forming gas
business
Quasistatic process
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 93
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........4c35e9b4f26b0a3d551ea80467513e3b