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Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits
- Source :
- Japanese Journal of Applied Physics. 51:04DC03
- Publication Year :
- 2012
- Publisher :
- IOP Publishing, 2012.
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........4c311fc1c406c5be4a677fc0fc0a9b8c