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Ultimate Backside Sample Preparation For Ultra Thin High-k∕Metal Gate Stack Characterization
- Source :
- AIP Conference Proceedings.
- Publication Year :
- 2011
- Publisher :
- AIP, 2011.
-
Abstract
- Backside sample preparation is a well known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since only a fraction of the original sample must remain while removing all of the substrate and maintaining a smooth and flat surface suitable for analysis. Here we present a method adapted to the preparation of ultra thin layers grown on pure Si substrates. It consists in a mechanical polishing up to a few remaining microns, followed by a dedicated wet etch. This method can be operated in a routine fashion and yields an extremely flat and smooth surface, without any remaining Si from substrate. It therefore allows precise analysis of the layers of interests with various characterization techniques.
Details
- ISSN :
- 0094243X
- Database :
- OpenAIRE
- Journal :
- AIP Conference Proceedings
- Accession number :
- edsair.doi...........4bda4ce3b70d8533b5717339d6eac4fc