Cite
Limits of gate-oxide scaling in nano-transistors
MLA
Ming-Ren Lin, et al. “Limits of Gate-Oxide Scaling in Nano-Transistors.” 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), Nov. 2002. EBSCOhost, https://doi.org/10.1109/vlsit.2000.852781.
APA
Ming-Ren Lin, Qi Xiang, Bin Yu, C. Riccobene, & Haihong Wang. (2002). Limits of gate-oxide scaling in nano-transistors. 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104). https://doi.org/10.1109/vlsit.2000.852781
Chicago
Ming-Ren Lin, Qi Xiang, Bin Yu, C. Riccobene, and Haihong Wang. 2002. “Limits of Gate-Oxide Scaling in Nano-Transistors.” 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), November. doi:10.1109/vlsit.2000.852781.