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Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

Authors :
Tonio Buonassisi
Jeffrey M. Warrender
Joseph Sullivan
Daniel Recht
Peter D. Persans
Aurore J. Said
Michael J. Aziz
Source :
Applied Physics Letters. 99:073503
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n+p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain.

Details

ISSN :
10773118 and 00036951
Volume :
99
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........4bc8c9a3baf22feda58030439590bdec
Full Text :
https://doi.org/10.1063/1.3609871