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A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application

Authors :
Xiaole Cui
Bo Wang
Chung Len Lee
Chun Yang
Source :
2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Publication Year :
2013
Publisher :
IEEE, 2013.

Abstract

A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.

Details

Database :
OpenAIRE
Journal :
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
Accession number :
edsair.doi...........4b39eeaa2868b40241c84536c95ff637
Full Text :
https://doi.org/10.1109/edssc.2013.6628095