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Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials

Authors :
Koichiro Saiki
Keiji Ueno
Atsushi Koma
Source :
Journal of Crystal Growth. 111:1029-1032
Publication Year :
1991
Publisher :
Elsevier BV, 1991.

Abstract

The lattice matching condition usually encountered in heteroepitaxial growth has been found to be relaxed greatly when the interface between constituent materials has Van der Waals nature and forms no direct chemical bonds. Layered transition metal dichalcogenides are the typical materials having that nature, and a variety of heterostructures can be grown by using them. This kind of approach has been proved to be applied also to heteroepitaxial growth between such quasi-one-dimensional materials as tellurium and selenium, that onto dangling-bond terminated three-dimensional material substrates, and that of organic materials forming Van der Waals type crystals.

Details

ISSN :
00220248
Volume :
111
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........4ae77a0321c17f6c7093a14742f3e642
Full Text :
https://doi.org/10.1016/0022-0248(91)91126-u