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Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials
- Source :
- Journal of Crystal Growth. 111:1029-1032
- Publication Year :
- 1991
- Publisher :
- Elsevier BV, 1991.
-
Abstract
- The lattice matching condition usually encountered in heteroepitaxial growth has been found to be relaxed greatly when the interface between constituent materials has Van der Waals nature and forms no direct chemical bonds. Layered transition metal dichalcogenides are the typical materials having that nature, and a variety of heterostructures can be grown by using them. This kind of approach has been proved to be applied also to heteroepitaxial growth between such quasi-one-dimensional materials as tellurium and selenium, that onto dangling-bond terminated three-dimensional material substrates, and that of organic materials forming Van der Waals type crystals.
Details
- ISSN :
- 00220248
- Volume :
- 111
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........4ae77a0321c17f6c7093a14742f3e642
- Full Text :
- https://doi.org/10.1016/0022-0248(91)91126-u