Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

Authors :: Toshifumi Irisawa
Osamu Ichikawa
Tsutomu Tezuka
Minoru Oda
Yuuichi Kamimuta
Source :: Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Publication Year :: 2012
Publisher :: The Japan Society of Applied Physics, 2012.

Subjects :: Electron mobility
Materials science
Condensed matter physics
Gate dielectric
Inversion (meteorology)
High-κ dielectric

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........4aafc833aa0894ea1b2e7bd228d5d35a

Tools