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Plasma anodization of evaporated Al-InP systems

Authors :
H. M. Park
Fusako Koshiga
Y. Hirayama
Takuo Sugano
Source :
Journal of Electronic Materials. 11:1011-1022
Publication Year :
1982
Publisher :
Springer Science and Business Media LLC, 1982.

Abstract

Aluminium oxide-InP structures were fabricated by plasma anodization of evaporated Al-InP systems with intention of fabricating InP MISFETS. It was found that the resistivity and break-down strength of the A12O3 film were influenced by the selection of the end point of the anodization. At appropriate conditions the resistivity of 5 × 1010 − 1012Ω cm for the anodic Al2O3 and the minimum density of the interface trap states of 4 × 1011 cm−2 ev−1 for Al2 O3 -InP systems were obtained.

Subjects

Subjects :
End point
Materials science
Solid-state physics
business.industry
Anodizing
chemistry.chemical_element
Plasma
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Anode
chemistry
Aluminium
Electrical resistivity and conductivity
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Minimum density

Details

ISSN :
1543186X and 03615235
Volume :
11
Database :
OpenAIRE
Journal :
Journal of Electronic Materials
Accession number :
edsair.doi...........4a5ba38de9653fcfbd3f9db20e57b931
Full Text :
https://doi.org/10.1007/bf02658913
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