Kinetics of deposition of bismuth film by a molecular beam method

The growth processes of bismuth films on Si(111) surfaces were studied using quadrupole mass spectrometry, AES, and LEED. At higher substrate temperatures, the adsorption occurs only in a tightly bound state. The LEED pattern from these surfaces shows a Si(111) √3 × √3−30° -Bi structure. At lower temperatures, the orientation relationship of Bi(0001) ∥ Si(111) was observed for thick films.