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Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers
- Source :
- Chinese Journal of Lasers. 45:0501002
- Publication Year :
- 2018
- Publisher :
- Shanghai Institute of Optics and Fine Mechanics, 2018.
Details
- ISSN :
- 02587025
- Volume :
- 45
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Lasers
- Accession number :
- edsair.doi...........4a12ba5fee221a3466c0479e24c26d04