XPS studies of oxide layers on InP after oxidation in the presence of Ce4+

Quantitative XPS analysed are carried out to study the III-V semiconductor/solution interface. In the presence of ceric ions (Ce 4+ ) solvated acid (H 2 SO 4 , 0.5-2 M), III-V compounds undergo a dissolution which is completely goverged by an electrochemical process. Competition between a superficial oxide growth and its quasi-simultaneous dissolution determines the behaviour of the interface as a function of time. On Inp some typical surface evolutions are observed, such as a decrease in the hole injection current during the reduction of cerium oxidized species