Back to Search
Start Over
Effects of electric field and strain on the Schottky barrier of the bilayer van der Waals heterostructures of graphene and pure/hydrogenated PC3 monolayer
- Source :
- Physica E: Low-dimensional Systems and Nanostructures. 133:114785
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- The carbon-based van der Waals (vdW) heterostructures with metal-semiconductor (M-S) junction have shown great potential for nanodevices and optoelectronic applications; however, the Schottky barrier at interface restricts the injection efficiency of charges. Here, we systematically investigate the effect of the electronic field and biaxial strain on the electronic properties and the Schottky barrier height (SBH) of the PC 3/graphene(G) and PC3H/G vdW heterostructures through first-principles calculations. The results show that the charge redistribution at interface leads to a shift of the Fermi level, which determines the contact type and height of the Schottky barrier. Moreover, the contact type could be tuned from p-type Schottky contact to Ohmic contact by electronic field or in-plane biaxial strain, thus obtaining highly efficient charge transfer. Most importantly, we demonstrate that hydrogenation of PC3 is an effective strategy to partly screen the external electronic field, whereas more sensitive to strain for inducing the contact type transform and SBH variation of the PC3 H/G heterostructure . This work provides a promising to design novel carbon-based nonmetal vdW heterostructures and explore their potential applications in electronic and optoelectronic devices .
- Subjects :
- Materials science
Condensed matter physics
Graphene
Schottky barrier
Fermi level
Heterojunction
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
0104 chemical sciences
Electronic, Optical and Magnetic Materials
law.invention
symbols.namesake
law
Electric field
Monolayer
symbols
van der Waals force
0210 nano-technology
Ohmic contact
Subjects
Details
- ISSN :
- 13869477
- Volume :
- 133
- Database :
- OpenAIRE
- Journal :
- Physica E: Low-dimensional Systems and Nanostructures
- Accession number :
- edsair.doi...........4971ca192fe76c165f5eeffd1f1be8aa