Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET

Since the fabrication of first III–V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) In x Ga 1−x As nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent Schrodinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account. The effects of channel length variation on transport characteristics are also examined.