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Inhibition of In desorption in diluted nitride InAsN quantum dots

Authors :
David González
A. Guzmán
D.F. Reyes
JM José Maria Ulloa
David L. Sales
R. Gargallo-Caballero
Adrian Hierro
Source :
Applied Physics Letters. 98:071910
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

The effect of low N-alloying on the structure of capped InAs/GaAs quantum dots is analyzed by transmission electron microscopy related techniques. A statistical study of interplanar distances in InAsN quantum dots shows an increase in the lattice parameter compared to the InAs case. We suggest that the addition of nitrogen blocks the Ga/In exchange processes during the quantum dot capping process, leading to an In enrichment. The observed strong photoluminescence redshift of InAsN structures must therefore be attributed not only to the effect of nitrogen in the band gap, but also to a minor depletion of indium during the capping process.

Details

ISSN :
10773118 and 00036951
Volume :
98
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........48b4216b5ab1f702b1c415cc1ea1e466
Full Text :
https://doi.org/10.1063/1.3554386