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Inhibition of In desorption in diluted nitride InAsN quantum dots
- Source :
- Applied Physics Letters. 98:071910
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- The effect of low N-alloying on the structure of capped InAs/GaAs quantum dots is analyzed by transmission electron microscopy related techniques. A statistical study of interplanar distances in InAsN quantum dots shows an increase in the lattice parameter compared to the InAs case. We suggest that the addition of nitrogen blocks the Ga/In exchange processes during the quantum dot capping process, leading to an In enrichment. The observed strong photoluminescence redshift of InAsN structures must therefore be attributed not only to the effect of nitrogen in the band gap, but also to a minor depletion of indium during the capping process.
- Subjects :
- Photoluminescence
Physics and Astronomy (miscellaneous)
Condensed matter physics
Band gap
Chemistry
Wide-bandgap semiconductor
chemistry.chemical_element
Nitride
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Lattice constant
Chemical physics
Transmission electron microscopy
Quantum dot
Indium
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 98
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........48b4216b5ab1f702b1c415cc1ea1e466
- Full Text :
- https://doi.org/10.1063/1.3554386