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Top- and side-gated epitaxial graphene field effect transistors
- Source :
- physica status solidi (a). 207:286-290
- Publication Year :
- 2009
- Publisher :
- Wiley, 2009.
-
Abstract
- Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm 2 /Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side-gate FET structures are promising. Conductivity (left panel) and transport resistances ρ xx and ρ xy of a top gate graphene Hall bar on SiC Si-face, showing a sign reversal of the Hall coefficient at the resistance peak.
- Subjects :
- Materials science
Magnetoresistance
Silicon
business.industry
Graphene
chemistry.chemical_element
Surfaces and Interfaces
Condensed Matter Physics
Epitaxy
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
chemistry
law
Hall effect
Materials Chemistry
Silicon carbide
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Electron-beam lithography
Subjects
Details
- ISSN :
- 18626300
- Volume :
- 207
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........48a2695f7bdc38c38e5dcdf909341410