Low power all‐optical bistability in InGaAs‐AlInAs superlattices: Demonstration of a wireless self‐electro‐optical effect device operating at 1.5 μm

We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs‐AlInAs superlattice p‐i‐n structures. Bistability results, in analogy with the self‐electro‐optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built‐in field, and screening by photocarriers.We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs‐AlInAs superlattice p‐i‐n structures. Bistability results, in analogy with the self‐electro‐optical effect device, from a positive feedback mechanism due to the interplay between Wannier–Stark effect, built‐in field, and screening by photocarriers.