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0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Authors :
Dieter Bimberg
B. V. Volovik
I. P. Soshnikov
Nikolay A. Maleev
D. A. Bedarev
I. S. Tarasov
P. S. Kop’ev
Zh. I. Alferov
A. E. Zhukov
A. F. Tsatsul’nikov
S. S. Mikhrin
A. R. Kovsh
N. N. Ledentsov
Yu. M. Shernyakov
V. M. Ustinov
D.A. Livshits
Mikhail V. Maximov
Source :
Semiconductor Science and Technology. 15:1061-1064
Publication Year :
2000
Publisher :
IOP Publishing, 2000.

Abstract

A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK QD one in power characteristics. A maximum output power of 3.9 W and a peak power conversion efficiency of 59% have been achieved for SML QD 100 µm wide lasers at 10 °C.

Details

ISSN :
13616641 and 02681242
Volume :
15
Database :
OpenAIRE
Journal :
Semiconductor Science and Technology
Accession number :
edsair.doi...........47f8d432bf8a8333005e2ca677179e4c