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Solar-Blind Photoresistors Based on $\hbox{Mg}_{0.48} \hbox{Zn}_{0.52}\hbox{O}$ Thin Films Grown on $r\hbox{-Al}_{2} \hbox{O}_{3}$ Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Source :
- IEEE Transactions on Electron Devices. 59:1970-1973
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- Solar-blind photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 59
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........47f516306cd9ffeb7ac17d7688b538c3
- Full Text :
- https://doi.org/10.1109/ted.2012.2193886