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Solar-Blind Photoresistors Based on $\hbox{Mg}_{0.48} \hbox{Zn}_{0.52}\hbox{O}$ Thin Films Grown on $r\hbox{-Al}_{2} \hbox{O}_{3}$ Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Authors :
Zhenjun Li
Fengjuan Liu
Haiqin Huang
Yuan-Min Wang
Jian-Wei Zhao
Zuofu Hu
Xiqing Zhang
Lu Zhu
Source :
IEEE Transactions on Electron Devices. 59:1970-1973
Publication Year :
2012
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2012.

Abstract

Solar-blind photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.

Details

ISSN :
15579646 and 00189383
Volume :
59
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi...........47f516306cd9ffeb7ac17d7688b538c3
Full Text :
https://doi.org/10.1109/ted.2012.2193886