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Magnetic tunnel junctions with an equiatomic quaternary CoFeMnSi Heusler alloy electrode
- Source :
- Applied Physics Letters. 112:052403
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- Tunnel magnetoresistance (TMR) in MgO-based magnetic tunnel junctions (MTJs) with equiatomic quaternary CoFeMnSi Heusler and CoFe alloy electrodes is studied. The epitaxial MTJ stacking structures were prepared using ultrahigh-vacuum magnetron sputtering, where the CoFeMnSi electrode has a full B2 and partial L21 ordering crystal structure. Maximum TMR ratios of 101% and 521% were observed at room temperature and 10 K, respectively, for the MTJs. The large bias voltage dependence of the TMR ratio was also observed at low temperature (LT), as similarly observed in Co2MnSi Heusler alloy-based MTJs in the past. The physical origins of this relatively large TMR ratio at LT were discussed in terms of the half-metallicity of CoFeMnSi.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Alloy
Stacking
Biasing
02 engineering and technology
Crystal structure
Sputter deposition
engineering.material
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Tunnel magnetoresistance
0103 physical sciences
Electrode
engineering
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 112
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........47c6b2af3ece6b44e09971482c42b8d2