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Magnetic tunnel junctions with an equiatomic quaternary CoFeMnSi Heusler alloy electrode

Authors :
Shigemi Mizukami
Masahito Tsujikawa
Masafumi Shirai
Kazuya Suzuki
Hiroki Tsuchiura
Lakhan Bainsla
Source :
Applied Physics Letters. 112:052403
Publication Year :
2018
Publisher :
AIP Publishing, 2018.

Abstract

Tunnel magnetoresistance (TMR) in MgO-based magnetic tunnel junctions (MTJs) with equiatomic quaternary CoFeMnSi Heusler and CoFe alloy electrodes is studied. The epitaxial MTJ stacking structures were prepared using ultrahigh-vacuum magnetron sputtering, where the CoFeMnSi electrode has a full B2 and partial L21 ordering crystal structure. Maximum TMR ratios of 101% and 521% were observed at room temperature and 10 K, respectively, for the MTJs. The large bias voltage dependence of the TMR ratio was also observed at low temperature (LT), as similarly observed in Co2MnSi Heusler alloy-based MTJs in the past. The physical origins of this relatively large TMR ratio at LT were discussed in terms of the half-metallicity of CoFeMnSi.

Details

ISSN :
10773118 and 00036951
Volume :
112
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........47c6b2af3ece6b44e09971482c42b8d2