A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps

Authors :: Bernd Tillack
G. G. Fischer
D. Knoll
Peter Schley
J. Schmidt
Thomas Grabolla
A. Fox
D. Wolansky
K. Schulz
Wolfgang Winkler
J. Drews
Steffen Marschmeyer
Bernd Heinemann
Andreas Mai
J. Borngraber
D. Schmidt
Holger Rucker
U. Haak
Yuji Yamamoto
R. Barth
F. Korndorfer
Source :: 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Publication Year :: 2009
Publisher :: IEEE, 2009.
Abstract: A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f T =50 GHz, f max =130 GHz, BV CEO =3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above 200 GHz are demonstrated.

Subjects :: Materials science
business.industry
Amplifier
Electrical engineering
Ring oscillator
Bicmos technology
Silicon-germanium
chemistry.chemical_compound
chemistry
Logic gate
Extremely high frequency
Optoelectronics
Bicmos integrated circuits
business
AND gate

Tools