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Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures
- Source :
- Applied Physics Letters. 88:153105
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2O3.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........470dbdcf48ecb798d89c7c15139c2b7d