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Power GaN FET boards thermal and electromagnetic optimization by FE modeling
- Source :
- Microelectronics Reliability. :113466
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- This work deals with optimization of boards with commercial discrete power GaN FETs in applications where natural air convection is a strict constraint. In these cases, both thermal and electromagnetic behaviours are critical reliability issues for the board design, and they are modeled by Finite Element (FE) analysis, starting from literature description of the device structure, and measurements on a simple test circuit. For improved accuracy and more realistic modeling, verification and validation simulation steps are introduced, in order to evaluate the relevant error parameters for different FEM solutions. The results obtained demonstrate a good fitting with experimental and make it possible to improve board thermal characteristic. The electromagnetic simulations allow the evaluation, and possibly the reduction, of parasitic inductances for different layouts. Then, the proposed approach enables thermal and electromagnetic optimization of the layout design by simple FEM simulations, without any preliminary prototype, with time and cost saving.
- Subjects :
- 010302 applied physics
Computer science
Page layout
020208 electrical & electronic engineering
Constraint (computer-aided design)
Mechanical engineering
02 engineering and technology
Condensed Matter Physics
computer.software_genre
01 natural sciences
Atomic and Molecular Physics, and Optics
Finite element method
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Power (physics)
Reliability (semiconductor)
0103 physical sciences
Thermal
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Reduction (mathematics)
computer
Verification and validation
Subjects
Details
- ISSN :
- 00262714
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........46cfd44f0e954aeb1d0f42927de86e8a