Back to Search
Start Over
PBTI Investigation of MoS2n-MOSFET With Al2O3Gate Dielectric
- Source :
- IEEE Electron Device Letters. 38:677-680
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2017.
-
Abstract
- For the first time, we report the positive bias temperature instability of the back gated multilayer MoS2 n-MOSFETs with Al2O3 gate dielectric. In the stress phase, the ${I}_{d}$ – ${V}_{g}$ curve shifts to the positive gate bias. In the recovery phase, it shifts back to the negative gate bias. After 5000 s recovery, it completely recovers to that of the fresh device. The results indicate that the voltage shift is solely due to trapping and detrapping of the pre-existing border traps in the Al2O3 dielectric. The traps consist of fast and slow components with the capture time constants of 7 and $ {1.8}\times {10}^{2}$ s and the emission time constants of 15 and ${1.0}\times {10}^{3}$ s, respectively. The results from first-order trapping and detrapping calculations are in overall agreements with 12 measured $\Delta {V}_{g}$ curves including six under stress voltages and six in the recovery phases. The energy densities for the fast and slow traps are derived to be in the order of 1013 cm $^{-2}$ eV $^{-1}$ above the bottom of the MoS2 conduction band.
- Subjects :
- 010302 applied physics
Physics
Gate dielectric
Time constant
Order (ring theory)
02 engineering and technology
Dielectric
Trapping
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
Phase (matter)
0103 physical sciences
MOSFET
Electrical and Electronic Engineering
Atomic physics
0210 nano-technology
Energy (signal processing)
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........46a7ece0cf9f96fee4c0144461da600d
- Full Text :
- https://doi.org/10.1109/led.2017.2679221