Band Offset Transitivity in the AlGaAs/GaP/InP System

Two samples consisting of five periods of a GaP/InP short-period superlattice clad by AlGaAs layers have been grown by atomic layer molecular beam epitaxy, and have been structurally characterized by X-ray diffraction. Low-temperature photoluminescence and excitation photoluminescence measurements using circular polarization excitation and detection techniques have been performed. Results can be explained if the offset between AlGaAs/GaP is the one governed by the transitivity rule, provided a very small segregation is assumed in the GaP/InP system.